IXGP2N100A
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1000V 4A 25W TO220AB
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Technical Details
Supply Chain
Factory Lead Time 6 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Weight 2.299997g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 25W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 25W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1kV
Max Collector Current 4A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 1kV
Voltage - Collector Emitter Breakdown (Max) 1000V
Turn On Time 100 ns
Test Condition 800V, 2A, 150 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 2A
Turn Off Time-Nom (toff) 100 ns
Gate Charge 7.8nC
Current - Collector Pulsed (Icm) 8A
Td (on/off) @ 25°C 15ns/300ns
Switching Energy 260μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 8V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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