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IXGP28N120B

IXYS
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 1200V 50A 250W TO220
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Technical Details

Compliance

RoHS Status ROHS3 Compliant

Technical

Switching Energy 2mJ (off)
Td (on/off) @ 25°C 30ns/180ns
Current - Collector Pulsed (Icm) 150A
Gate Charge 92nC
Turn Off Time-Nom (toff) 550 ns
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 28A
Test Condition 960V, 28A, 5 Ω, 15V
Turn On Time 63 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
JEDEC-95 Code TO-220AB
Max Collector Current 50A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 250W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number IXG*28N120
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 250W
Terminal Finish Matte Tin (Sn)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e3
Published 2004
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Weight 2.299997g
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 8 Weeks

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