IXGP24N60C4D1
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 56A 190W TO220
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 350μJ (on), 340μJ (off)
Td (on/off) @ 25°C 22ns/192ns
Current - Collector Pulsed (Icm) 130A
Gate Charge 64nC
IGBT Type PT
Turn Off Time-Nom (toff) 263 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 24A
Test Condition 360V, 24A, 10 Ω, 15V
Turn On Time 52 ns
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-220AB
Reverse Recovery Time 30 ns
Max Collector Current 56A
Collector Emitter Voltage (VCEO) 2.7V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 190W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Max Power Dissipation 190W
Subcategory Insulated Gate BIP Transistors
Additional Feature ULTRA FAST
Terminal Finish TIN SILVER COPPER
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 2011
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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