IXGP20N100
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1000V 40A 150W TO220
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Technical Details
Technical
Current - Collector Pulsed (Icm) 80A
Gate Charge 73nC
IGBT Type PT
Turn Off Time-Nom (toff) 1220 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 20A
Test Condition 800V, 20A, 47 Ω, 15V
Turn On Time 60 ns
Collector Emitter Saturation Voltage 3V
Voltage - Collector Emitter Breakdown (Max) 1000V
Collector Emitter Breakdown Voltage 1kV
JEDEC-95 Code TO-220AB
Max Collector Current 40A
Collector Emitter Voltage (VCEO) 1kV
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Power - Max 150W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number IXG*20N100
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 150W
Subcategory Insulated Gate BIP Transistors
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Published 2003
Packaging Tube
Operating Temperature -55°C~150°C TJ
Fall Time-Max (tf) 700ns
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 3.5mJ (off)
Td (on/off) @ 25°C 30ns/350ns
Physical
Transistor Element Material SILICON
Weight 2.299997g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 8 Weeks
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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