IXGP16N60B2D1
RoHS
/
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 160μJ (on), 120μJ (off)
Td (on/off) @ 25°C 18ns/73ns
Current - Collector Pulsed (Icm) 100A
Gate Charge 24nC
IGBT Type PT
Turn Off Time-Nom (toff) 280 ns
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 12A
Test Condition 400V, 12A, 22 Ω, 15V
Turn On Time 43 ns
Collector Emitter Saturation Voltage 2.3V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-220AB
Reverse Recovery Time 30ns
Max Collector Current 40A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 150W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Base Part Number IXG*16N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 150W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Pure Tin (Sn)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Series HiPerFAST?
Published 2010
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 2.299997g
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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