IXGP15N120B
RoHS 
RoHS compliant
RoHS compliantPackage TO-220-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 30A 150W TO220AB
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.75mJ (off)
Td (on/off) @ 25°C 25ns/180ns
Current - Collector Pulsed (Icm) 60A
Gate Charge 69nC
IGBT Type PT
Turn Off Time-Nom (toff) 660 ns
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 15A
Test Condition 960V, 15A, 10 Ω, 15V
Turn On Time 43 ns
Collector Emitter Saturation Voltage 3.2V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
JEDEC-95 Code TO-220AB
Max Collector Current 30A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 150W
Input Type Standard
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number IXG*15N120
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 150W
Subcategory Insulated Gate BIP Transistors
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Series HiPerFAST?
Published 2000
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 2.299997g
Number of Pins 3
Package / Case TO-220-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 8 Weeks
Alternative Model
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