Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 2.5mJ (off)
Td (on/off) @ 25°C 100ns/850ns
Current - Collector Pulsed (Icm) 48A
Turn Off Time-Nom (toff) 900 ns
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 12A
Test Condition 800V, 12A, 120 Ω, 15V
Voltage - Collector Emitter Breakdown (Max) 1000V
Collector Emitter Breakdown Voltage 1kV
Max Collector Current 24A
Collector Emitter Voltage (VCEO) 4V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Qualification Status Not Qualified
Base Part Number IXG*12N100
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 100W
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH SPEED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ