IXGM30N60
RoHS 
RoHS compliant
RoHS compliantPackage TO-204AE
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
POWER MOSFET TO-3
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Fall Time-Max (tf) 2000ns
Power Dissipation Ambient-Max 200W
Gate-Emitter Thr Voltage-Max 5V
VCEsat-Max 2.5 V
Gate-Emitter Voltage-Max 30V
Td (on/off) @ 25°C 100ns/500ns
Current - Collector Pulsed (Icm) 100A
Gate Charge 180nC
Turn Off Time-Nom (toff) 1100 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 30A
Turn On Time 300 ns
Power Dissipation-Max (Abs) 200W
Current - Collector (Ic) (Max) 50A
Voltage - Collector Emitter Breakdown (Max) 600V
Reverse Recovery Time 200ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 200W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE
Rise Time-Max 200ns
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-MBFM-P2
Terminal Form PIN/PEG
Terminal Position BOTTOM
Subcategory Insulated Gate BIP Transistors
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-204AE
Mounting Type Through Hole
Alternative Model
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