IXGM25N100A
RoHS 
RoHS compliant
RoHS compliantPackage TO-204AE
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
Trans IGBT Chip N-CH 1KV 50A 3-Pin(2+Tab) TO-204AE
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Power Dissipation Ambient-Max 200W
Gate-Emitter Thr Voltage-Max 5V
VCEsat-Max 4 V
Gate-Emitter Voltage-Max 20V
Switching Energy 5mJ (off)
Td (on/off) @ 25°C 100ns/500ns
Current - Collector Pulsed (Icm) 100A
Gate Charge 180nC
Turn Off Time-Nom (toff) 1520 ns
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 25A
Test Condition 800V, 25A, 33 Ω, 15V
Turn On Time 350 ns
Power Dissipation-Max (Abs) 200W
Current - Collector (Ic) (Max) 50A
Voltage - Collector Emitter Breakdown (Max) 1000V
Reverse Recovery Time 200ns
Collector Emitter Voltage (VCEO) 1kV
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 200W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code O-MBFM-P2
Pin Count 2
Time@Peak Reflow Temperature-Max (s) 35
Peak Reflow Temperature (Cel) 260
Terminal Form PIN/PEG
Terminal Position BOTTOM
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH SPEED
Terminal Finish Matte Tin (Sn)
Number of Terminations 2
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-204AE
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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