IXGM20N60
RoHS 
RoHS compliant
RoHS compliantPackage TO-204AE
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
POWER MOSFET TO-3
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Technical Details
Physical
Mounting Type Through Hole
Package / Case TO-204AE
Surface Mount NO
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Subcategory Insulated Gate BIP Transistors
Terminal Position BOTTOM
Terminal Form PIN/PEG
JESD-30 Code O-MBFM-P2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 150W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 200ns
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 40A
Power Dissipation-Max (Abs) 150W
Turn On Time 300 ns
Test Condition 480V, 20A, 82 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Turn Off Time-Nom (toff) 1430 ns
Gate Charge 120nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 100ns/600ns
Switching Energy 2mJ (on), 3.2mJ (off)
Gate-Emitter Voltage-Max 20V
VCEsat-Max 2.5 V
Gate-Emitter Thr Voltage-Max 5V
Power Dissipation Ambient-Max 150W
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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