Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.6mJ (on), 2.9mJ (off)
Td (on/off) @ 25°C 44ns/310ns
Current - Collector Pulsed (Icm) 600A
Turn Off Time-Nom (toff) 730 ns
Vce(on) (Max) @ Vge, Ic 1.5V @ 15V, 100A
Test Condition 300V, 100A, 1 Ω, 15V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 150A
Collector Emitter Voltage (VCEO) 1.5V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Qualification Status Not Qualified
Base Part Number IXG*200N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 400W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ