IXGK72N60B3H1
RoHS 
RoHS compliant
RoHS compliantPackage TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 75A 540W TO264
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series GenX3?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 540W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*72N60
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation 540W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 75A
Reverse Recovery Time 140 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 600V
Turn On Time 63 ns
Test Condition 480V, 50A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 60A
Turn Off Time-Nom (toff) 370 ns
IGBT Type PT
Gate Charge 225nC
Current - Collector Pulsed (Icm) 450A
Td (on/off) @ 25°C 31ns/152ns
Switching Energy 1.4mJ (on), 1mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 150 ns
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
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