Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish TIN SILVER COPPER
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 540W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*72N60
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.35V
Max Collector Current 75A
Reverse Recovery Time 140ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.35V
Test Condition 480V, 50A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.35V @ 15V, 60A
Turn Off Time-Nom (toff) 885 ns
Current - Collector Pulsed (Icm) 400A
Td (on/off) @ 25°C 31ns/320ns
Switching Energy 1.4mJ (on), 3.5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V