IXGK50N60AU1
RoHS
/
Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 75A 300W TO264AA
PDF
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Buying Options
Total Price: USD $6.44
Unit Price: USD $6.4372
≥1 USD $6.4372
≥10 USD $5.282
≥100 USD $5.1167
≥500 USD $4.9514
≥1000 USD $4.78705
Inventory: 1128
Minimum: 1
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Weight 10.000011g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Series HiPerFAST?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Additional Feature HIGH SPEED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 300W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*50N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 300W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 75A
Reverse Recovery Time 50 ns
Collector Emitter Breakdown Voltage 600V
Turn On Time 290 ns
Test Condition 480V, 50A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 50A
Turn Off Time-Nom (toff) 880 ns
Gate Charge 200nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 50ns/200ns
Switching Energy 4.8mJ (off)
Gate-Emitter Voltage-Max 20V
VCEsat-Max 2.7 V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 200ns
Compliance
RoHS Status RoHS Compliant
Alternative Model
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