IXGK35N120B
RoHS 
RoHS compliant
RoHS compliantPackage TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 70A 350W TO264AA
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 3.8mJ (off)
Td (on/off) @ 25°C 50ns/180ns
Current - Collector Pulsed (Icm) 140A
Gate Charge 170nC
IGBT Type PT
Turn Off Time-Nom (toff) 660 ns
Vce(on) (Max) @ Vge, Ic 3.3V @ 15V, 35A
Test Condition 960V, 35A, 5 Ω, 15V
Turn On Time 86 ns
Collector Emitter Saturation Voltage 3.3V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
Max Collector Current 70A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Transistor Application MOTOR CONTROL
Power - Max 350W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number IXG*35N120
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 350W
Subcategory Insulated Gate BIP Transistors
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Series HiPerFAST?
Published 2002
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 10.000011g
Number of Pins 3
Package / Case TO-264-3, TO-264AA
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 8 Weeks
Alternative Model
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