Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 2.7mJ (on), 3.5mJ (off)
Td (on/off) @ 25°C 44ns/250ns
Current - Collector Pulsed (Icm) 1200A
Turn Off Time-Nom (toff) 780 ns
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 100A
Test Condition 480V, 100A, 1 Ω, 15V
Collector Emitter Saturation Voltage 600V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 500A
Collector Emitter Voltage (VCEO) 1.6V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 1.7kW
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish TIN SILVER COPPER
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ