IXGK120N60C2
RoHS
/
Package TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 75A 830W TO264
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Weight 10.000011g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series HiPerFAST?, Lightspeed 2?
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Power Dissipation 830W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*120N60
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 830W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 75A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.5V
Turn On Time 100 ns
Test Condition 400V, 80A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 100A
Turn Off Time-Nom (toff) 257 ns
IGBT Type PT
Gate Charge 370nC
Current - Collector Pulsed (Icm) 500A
Td (on/off) @ 25°C 40ns/120ns
Switching Energy 1.7mJ (on), 1mJ (off)
Compliance
RoHS Status RoHS Compliant
Alternative Model
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