IXGK120N120B3
RoHS 
RoHS compliant
RoHS compliantPackage TO-264-3, TO-264AA
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 200A 830W TO264
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Buying Options
Total Price: USD $68.92
Unit Price: USD $68.924624
≥1 USD $68.924624
≥200 USD $27.502629
≥500 USD $26.583599
≥1000 USD $26.129336
Inventory: 2491
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 30 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series GenX3?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 830W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 830W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 200A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 122 ns
Test Condition 600V, 100A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 100A
Turn Off Time-Nom (toff) 885 ns
IGBT Type PT
Gate Charge 470nC
Current - Collector Pulsed (Icm) 370A
Td (on/off) @ 25°C 36ns/275ns
Switching Energy 5.5mJ (on), 5.8mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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