IXGJ40N60C2D1
RoHS
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Package TO-220-3, Short Tab
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 75A 300W TO268
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 200μJ (off)
Td (on/off) @ 25°C 18ns/90ns
Current - Collector Pulsed (Icm) 200A
Gate Charge 95nC
IGBT Type PT
Turn Off Time-Nom (toff) 210 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 30A
Test Condition 400V, 30A, 3 Ω, 15V
Turn On Time 38 ns
Collector Emitter Saturation Voltage 2.5V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-268
Reverse Recovery Time 25 ns
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 2.7V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 300W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSIP-T3
Pin Count 4
Base Part Number IXG*40N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 300W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Matte Tin (Sn)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Series HiPerFAST?
Published 2010
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 4.500005g
Package / Case TO-220-3, Short Tab
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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