Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.5mJ (on), 1mJ (off)
Td (on/off) @ 25°C 25ns/138ns
Current - Collector Pulsed (Icm) 400A
Turn Off Time-Nom (toff) 326 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 50A
Test Condition 480V, 50A, 3 Ω, 15V
Collector Emitter Breakdown Voltage 600V
Collector Emitter Voltage (VCEO) 1.8V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 460W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ