IXGH60N60C3D1
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 75A 380W TO247AD
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Buying Options
Total Price: USD $5.39
Unit Price: USD $5.3922
≥1 USD $5.3922
≥10 USD $4.42415
≥100 USD $4.2864
≥500 USD $4.1477
≥1000 USD $4.00995
≥3000 USD $3.5948
Inventory: 25804
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 30 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series GenX3?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 380W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*60N60
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 21 ns
Power - Max 380W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 70 ns
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 75A
Reverse Recovery Time 25 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Turn On Time 64 ns
Test Condition 480V, 40A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A
Turn Off Time-Nom (toff) 226 ns
IGBT Type PT
Gate Charge 115nC
Current - Collector Pulsed (Icm) 300A
Td (on/off) @ 25°C 21ns/70ns
Switching Energy 800μJ (on), 450μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 95 ns
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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