Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 800μJ (on), 450μJ (off)
Td (on/off) @ 25°C 21ns/70ns
Current - Collector Pulsed (Icm) 300A
Turn Off Time-Nom (toff) 226 ns
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A
Test Condition 480V, 40A, 3 Ω, 15V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 25 ns
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 2.5V
Turn-Off Delay Time 70 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Base Part Number IXG*60N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 380W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ