IXGH56N60B3D1
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 330W TO247
PDF
/
Buying Options
Total Price: USD $6.19
Unit Price: USD $6.18735
≥1 USD $6.18735
≥10 USD $5.0768
≥100 USD $4.91815
≥500 USD $4.7595
≥1000 USD $4.60085
Inventory: 1300
Minimum: 1
-
+
Technical Details
Technical
Td (on/off) @ 25°C 26ns/155ns
Switching Energy 1.3mJ (on), 1.05mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 165ns
Current - Collector Pulsed (Icm) 350A
Gate Charge 138nC
IGBT Type PT
Turn Off Time-Nom (toff) 385 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 44A
Test Condition 480V, 44A, 5 Ω, 15V
Turn On Time 63 ns
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 100ns
Collector Emitter Voltage (VCEO) 1.8V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Max Power Dissipation 330W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Series GenX3?
Published 2014
Packaging Tube
Operating Temperature -55°C~150°C TJ
Compliance
RoHS Status ROHS3 Compliant
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 30 Weeks
Alternative Model
Recommended For You
IXGH56N60B3D1+price,IXGH56N60B3D1+datasheet,IXGH56N60B3D1+in stock,buy+IXGH56N60B3D1,finder+IXGH56N60B3D1,IXGH56N60B3D1+tutorials,IXGH56N60B3D1+download