IXGH56N60B3
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
DISC IGBT PT-MID FREQUENCY TO-24
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Technical Details
Technical
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 330W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Part Status Active
Pbfree Code yes
JESD-609 Code e1
Series GenX3?
Published 2012
Operating Temperature -55°C~150°C TJ
Fall Time-Max (tf) 165ns
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 1.3mJ (on), 1.05mJ (off)
Td (on/off) @ 25°C 26ns/155ns
Current - Collector Pulsed (Icm) 350A
Gate Charge 138nC
IGBT Type PT
Turn Off Time-Nom (toff) 385 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 44A
Test Condition 480V, 44A, 5 Ω, 15V
Turn On Time 63 ns
Power Dissipation-Max (Abs) 330W
Current - Collector (Ic) (Max) 130A
Voltage - Collector Emitter Breakdown (Max) 600V
JEDEC-95 Code TO-247AD
Reverse Recovery Time 41ns
Physical
Transistor Element Material SILICON
Surface Mount NO
Package / Case TO-247-3
Mounting Type Through Hole
Supply Chain
Factory Lead Time 1 Weeks
Compliance
RoHS Status RoHS Compliant
Alternative Model
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