Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) Not Applicable
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 300W
Base Part Number IXG*50N60
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 75A
Collector Emitter Breakdown Voltage 600V
Test Condition 480V, 50A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 50A
Turn Off Time-Nom (toff) 450 ns
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 50ns/150ns
Switching Energy 3mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V