Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 360μJ (off)
Td (on/off) @ 25°C -/350ns
Current - Collector Pulsed (Icm) 46A
Turn Off Time-Nom (toff) 471 ns
Vce(on) (Max) @ Vge, Ic 6V @ 15V, 4A
Test Condition 1250V, 4A, 20 Ω, 15V
Voltage - Collector Emitter Breakdown (Max) 2500V
Collector Emitter Breakdown Voltage 2.5kV
Max Collector Current 13A
Collector Emitter Voltage (VCEO) 6V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Qualification Status Not Qualified
Max Power Dissipation 150W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ