Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*48N60
Qualification Status Not Qualified
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 120A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 300W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 950μJ (on), 2.9mJ (off)
Td (on/off) @ 25°C 25ns/334ns
Current - Collector Pulsed (Icm) 300A
Turn Off Time-Nom (toff) 925 ns
Vce(on) (Max) @ Vge, Ic 1.35V @ 15V, 32A
Test Condition 480V, 32A, 5 Ω, 15V
Collector Emitter Saturation Voltage 1.18V
Collector Emitter Breakdown Voltage 600V