Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 120μJ (on), 150μJ (off)
Td (on/off) @ 25°C 21ns/113ns
Current - Collector Pulsed (Icm) 250A
Turn Off Time-Nom (toff) 229 ns
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 42A
Test Condition 200V, 21A, 10 Ω, 15V
Collector Emitter Saturation Voltage 1.54V
Collector Emitter Breakdown Voltage 300V
Max Collector Current 42A
Collector Emitter Voltage (VCEO) 300V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 223W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Not For New Designs
Operating Temperature -55°C~150°C TJ