Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 200μJ (off)
Td (on/off) @ 25°C 18ns/90ns
Current - Collector Pulsed (Icm) 200A
Turn Off Time-Nom (toff) 210 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 30A
Test Condition 400V, 30A, 3 Ω, 15V
Collector Emitter Breakdown Voltage 600V
Reverse Recovery Time 25 ns
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 90 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Base Part Number IXG*40N60
Max Power Dissipation 300W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ