Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 3mJ (off)
Td (on/off) @ 25°C 100ns/600ns
Current - Collector Pulsed (Icm) 150A
Turn Off Time-Nom (toff) 900 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 40A
Test Condition 480V, 40A, 22 Ω, 15V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 75A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 600 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Turn On Delay Time 100 ns
Case Connection COLLECTOR
Element Configuration Single
Base Part Number IXG*40N60
Max Power Dissipation 250W
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH SPEED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ