IXGH40N120B2D1
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 75A 380W TO247
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Buying Options
Total Price: USD $81.99
Unit Price: USD $81.993205
≥1 USD $81.993205
≥10 USD $77.35208
≥100 USD $72.97366
≥500 USD $68.843077
≥1000 USD $64.946294
Inventory: 1183
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 30 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 380W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*40N120
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 380W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 75A
Reverse Recovery Time 100ns
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.9V
Turn On Time 79 ns
Test Condition 960V, 40A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 40A
Turn Off Time-Nom (toff) 770 ns
IGBT Type PT
Gate Charge 138nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 21ns/290ns
Switching Energy 4.5mJ (on), 3mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 270 ns
Dimensions
Height 21.46mm
Length 16.26mm
Width 5.3mm
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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