IXGH38N60U1
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 76A 200W TO247AD
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Technical
Packaging Tube
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 76A
Continuous Drain Current (ID) 38A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Drain to Source Breakdown Voltage 600V
Turn On Time 200 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 38A
Turn Off Time-Nom (toff) 1800 ns
Fall Time-Max (tf) 1100ns
Compliance
RoHS Status RoHS Compliant
Alternative Model
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