IXGH38N60
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 76A 200W TO247AD
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Fall Time-Max (tf) 1100ns
Gate-Emitter Thr Voltage-Max 5V
VCEsat-Max 1.8 V
Gate-Emitter Voltage-Max 20V
Switching Energy 9mJ (off)
Td (on/off) @ 25°C 30ns/600ns
Current - Collector Pulsed (Icm) 152A
Gate Charge 125nC
Turn Off Time-Nom (toff) 1800 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 38A
Test Condition 480V, 38A, 10 Ω, 15V
Turn On Time 200 ns
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-247AD
Max Collector Current 76A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 200W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e1
Published 1997
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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