Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 540μJ (on), 800μJ (off)
Td (on/off) @ 25°C 19ns/125ns
Current - Collector Pulsed (Icm) 200A
Turn Off Time-Nom (toff) 350 ns
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 30A
Test Condition 400V, 30A, 5 Ω, 15V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 92A
Collector Emitter Voltage (VCEO) 1.8V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Max Power Dissipation 250W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ