IXGH32N60C
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 60A 200W TO247AD
PDF
/
Inventory: 8099
Minimum: /
The more specific your information, the faster response you will get.
Please complete the following form with the details of your request part and
contact information to get a quote.
Quotation Consultation
Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2000
Series HiPerFAST?, Lightspeed?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 200W
Current Rating 60A
Base Part Number IXG*32N60
Pin Count 3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 25 ns
Transistor Application POWER CONTROL
Rise Time 20ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 85 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Turn On Time 25 ns
Test Condition 480V, 32A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 32A
Turn Off Time-Nom (toff) 110 ns
Gate Charge 110nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 25ns/85ns
Switching Energy 320μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
Recommended For You
IXGH32N60C+price,IXGH32N60C+datasheet,IXGH32N60C+in stock,buy+IXGH32N60C,finder+IXGH32N60C,IXGH32N60C+tutorials,IXGH32N60C+download