IXGH32N60BU1
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 60A 200W TO247AD
PDF
/
Buying Options
Total Price: USD $2.12
Unit Price: USD $2.12096
≥1 USD $2.12096
≥10 USD $2.00091
≥100 USD $1.88765
≥500 USD $1.7808
≥1000 USD $1.68
≥3000 USD $1.58491
Inventory: 8011
Minimum: 1
-
+
Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Radiation Hardening No
Technical
Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 600μJ (off)
Td (on/off) @ 25°C 25ns/100ns
Current - Collector Pulsed (Icm) 120A
Gate Charge 110nC
Turn Off Time-Nom (toff) 240 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 32A
Test Condition 480V, 32A, 4.7 Ω, 15V
Turn On Time 50 ns
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-247AD
Reverse Recovery Time 50ns
Max Collector Current 60A
Collector Emitter Voltage (VCEO) 600V
Turn-Off Delay Time 100 ns
Polarity/Channel Type N-CHANNEL
Rise Time 20ns
Transistor Application MOTOR CONTROL
Turn On Delay Time 25 ns
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Pin Count 3
Base Part Number IXG*32N60
Current Rating 60A
Max Power Dissipation 200W
Voltage - Rated DC 600V
Subcategory Insulated Gate BIP Transistors
Number of Terminations 3
Moisture Sensitivity Level (MSL) Not Applicable
Part Status Obsolete
Pbfree Code yes
Series HiPerFAST?
Published 2003
Packaging Bulk
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Weight 6.500007g
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
Recommended For You
IXGH32N60BU1+price,IXGH32N60BU1+datasheet,IXGH32N60BU1+in stock,buy+IXGH32N60BU1,finder+IXGH32N60BU1,IXGH32N60BU1+tutorials,IXGH32N60BU1+download