Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 150W
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 400 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Collector Emitter Breakdown Voltage 600V
Test Condition 480V, 31A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 31A
Turn Off Time-Nom (toff) 1600 ns
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 15ns/400ns
Switching Energy 6mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 1100ns