IXGH30N60C3C1
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 60A 220W TO247
PDF
/
Buying Options
Total Price: USD $17.21
Unit Price: USD $17.2083
≥1 USD $17.2083
≥10 USD $14.11985
≥100 USD $13.6781
≥500 USD $13.2373
≥1000 USD $12.7965
Inventory: 1283
Minimum: 1
-
+
Technical Details
Supply Chain
Factory Lead Time 30 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series GenX3?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 220W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*30N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 220W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 60A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 3V
Turn On Time 37 ns
Test Condition 300V, 20A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 20A
Turn Off Time-Nom (toff) 160 ns
IGBT Type PT
Gate Charge 38nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 17ns/42ns
Switching Energy 120μJ (on), 90μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Alternative Model
Recommended For You
IXGH30N60C3C1+price,IXGH30N60C3C1+datasheet,IXGH30N60C3C1+in stock,buy+IXGH30N60C3C1,finder+IXGH30N60C3C1,IXGH30N60C3C1+tutorials,IXGH30N60C3C1+download