IXGH30N60BU1
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 60A 200W TO247AD
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Technical Details
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2002
Series HiPerFAST?
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*30N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 200W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Reverse Recovery Time 50 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Turn On Time 60 ns
Test Condition 480V, 30A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 30A
Turn Off Time-Nom (toff) 430 ns
Gate Charge 110nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 25ns/130ns
Switching Energy 1mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
Fall Time-Max (tf) 190ns
Compliance
RoHS Status RoHS Compliant
Alternative Model
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