IXGH30N60B4
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 66A 190W TO247
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 440μJ (on), 700μJ (off)
Td (on/off) @ 25°C 21ns/200ns
Current - Collector Pulsed (Icm) 156A
Gate Charge 77nC
IGBT Type PT
Turn Off Time-Nom (toff) 451 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 24A
Test Condition 400V, 24A, 10 Ω, 15V
Turn On Time 53 ns
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-247AD
Max Collector Current 66A
Collector Emitter Voltage (VCEO) 1.7V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 190W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Max Power Dissipation 190W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Published 2011
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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