IXGH30N60A
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IXGH Series 600 Vce 50 A 100 ns t(on) High Speed IGBT - TO-247AD
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 5V
VCEsat-Max 3 V
Gate-Emitter Voltage-Max 30V
Turn Off Time-Nom (toff) 850 ns
Drain to Source Resistance 2.6Ohm
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 30A
Turn On Time 300 ns
Drain to Source Breakdown Voltage 600V
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-247AD
Continuous Drain Current (ID) 60A
Max Collector Current 50A
Collector Emitter Voltage (VCEO) 3V
Turn-Off Delay Time 500 ns
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Turn On Delay Time 100 ns
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 200W
Element Configuration Single
Rise Time-Max 200ns
Number of Elements 1
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Base Part Number IXG*30N60
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH SPEED
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 1997
Packaging Tube
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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