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IXGH30N120B3D1

IXYS
RoHS
RoHS RoHS compliant
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description IGBT 1200V 300W TO247AD
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Buying Options
Total Price: USD $9.64
Unit Price: USD $9.6448
≥1 USD $9.6448
≥10 USD $7.81117
≥100 USD $7.35174
≥500 USD $6.662498
≥1000 USD $6.111125
Inventory: 296
Minimum: 1
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Technical Details

Compliance

Lead Free Lead Free
RoHS Status ROHS3 Compliant

Technical

Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 3.47mJ (on), 2.16mJ (off)
Td (on/off) @ 25°C 16ns/127ns
Gate Charge 87nC
IGBT Type PT
Turn Off Time-Nom (toff) 471 ns
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 30A
Test Condition 960V, 30A, 5 Ω, 15V
Turn On Time 56 ns
Collector Emitter Saturation Voltage 2.96V
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
JEDEC-95 Code TO-247AD
Reverse Recovery Time 100ns
Max Collector Current 150A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Input Type Standard
Case Connection COLLECTOR
Power Dissipation 300W
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Base Part Number IXG*30N120
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 300W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
Pbfree Code yes
Series GenX3?
Published 2008
Packaging Tube
Operating Temperature -55°C~150°C TJ

Physical

Transistor Element Material SILICON
Weight 6.500007g
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole

Supply Chain

Factory Lead Time 20 Weeks

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