Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Current - Collector Pulsed (Icm) 13.5A
Turn Off Time-Nom (toff) 278 ns
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 2A
Voltage - Collector Emitter Breakdown (Max) 2500V
Collector Emitter Breakdown Voltage 2.5kV
Max Collector Current 5.5A
Collector Emitter Voltage (VCEO) 3.1V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 32W
Subcategory Insulated Gate BIP Transistors
Additional Feature LOW CONDUCTION LOSS
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ