Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Switching Energy 2mJ (off)
Td (on/off) @ 25°C 15ns/175ns
Current - Collector Pulsed (Icm) 80A
Turn Off Time-Nom (toff) 400 ns
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 28A
Test Condition 480V, 28A, 10 Ω, 15V
Collector Emitter Breakdown Voltage 600V
Max Collector Current 40A
Collector Emitter Voltage (VCEO) 600V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Element Configuration Single
Qualification Status Not Qualified
Base Part Number IXG*28N60
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 150W
Subcategory Insulated Gate BIP Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Operating Temperature -55°C~150°C TJ