IXGH28N140B3H1
RoHS
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Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1400V 60A 300W TO247
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Technical Details
Supply Chain
Factory Lead Time 8 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series GenX3?
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 300W
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 300W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.6V
Max Collector Current 60A
Reverse Recovery Time 350 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.4kV
Voltage - Collector Emitter Breakdown (Max) 1400V
Turn On Time 66 ns
Test Condition 960V, 28A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 28A
Turn Off Time-Nom (toff) 915 ns
Gate Charge 88nC
Current - Collector Pulsed (Icm) 150A
Td (on/off) @ 25°C 16ns/190ns
Switching Energy 3.6mJ (on), 3.9mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Compliance
RoHS Status RoHS Compliant
Alternative Model
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