IXGH25N120A
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 50A 200W TO247AD
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Buying Options
Total Price: USD $11.22
Unit Price: USD $11.22425
≥1 USD $11.22425
≥10 USD $9.21025
≥100 USD $8.9224
≥500 USD $8.63455
≥1000 USD $8.3467
Inventory: 1203
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
Gate-Emitter Thr Voltage-Max 6V
VCEsat-Max 4 V
Gate-Emitter Voltage-Max 20V
Switching Energy 11mJ (off)
Td (on/off) @ 25°C 100ns/650ns
Current - Collector Pulsed (Icm) 100A
Gate Charge 130nC
Turn Off Time-Nom (toff) 1520 ns
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 25A
Test Condition 960V, 25A, 33 Ω, 15V
Turn On Time 350 ns
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Breakdown Voltage 1.2kV
JEDEC-95 Code TO-247AD
Max Collector Current 50A
Collector Emitter Voltage (VCEO) 1.2kV
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 200W
Input Type Standard
Case Connection COLLECTOR
Element Configuration Single
Number of Elements 1
Qualification Status Not Qualified
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 200W
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH SPEED
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Active
JESD-609 Code e1
Published 1997
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 3
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Supply Chain
Factory Lead Time 8 Weeks
Alternative Model
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