Operating Temperature -55°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 35
Qualification Status Not Qualified
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 50A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 960V, 25A, 33 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 25A
Turn Off Time-Nom (toff) 1920 ns
Current - Collector Pulsed (Icm) 100A
Td (on/off) @ 25°C 100ns/650ns
Switching Energy 11mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V