IXGH24N60C4D1
RoHS
/
Package TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 600V 56A 190W TO247
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 400μJ (on), 300μJ (off)
Td (on/off) @ 25°C 21ns/143ns
Current - Collector Pulsed (Icm) 130A
Gate Charge 64nC
IGBT Type PT
Turn Off Time-Nom (toff) 248 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 24A
Test Condition 360V, 24A, 10 Ω, 15V
Turn On Time 52 ns
Collector Emitter Breakdown Voltage 600V
JEDEC-95 Code TO-247AD
Reverse Recovery Time 25 ns
Max Collector Current 56A
Collector Emitter Voltage (VCEO) 2.7V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Power - Max 190W
Input Type Standard
Case Connection COLLECTOR
Configuration SINGLE WITH BUILT-IN DIODE
Number of Elements 1
Qualification Status Not Qualified
JESD-30 Code R-PSFM-T3
Pin Count 3
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Position SINGLE
Max Power Dissipation 190W
Subcategory Insulated Gate BIP Transistors
Number of Terminations 3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
Published 2011
Packaging Tube
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case TO-247-3
Mounting Type Through Hole
Mount Through Hole
Alternative Model
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