Gate-Emitter Thr Voltage-Max 5.5V
Gate-Emitter Voltage-Max 20V
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 20A
Collector Emitter Breakdown Voltage 600V
Max Collector Current 40A
Collector Emitter Voltage (VCEO) 3V
Polarity/Channel Type N-CHANNEL
Transistor Application POWER CONTROL
Case Connection COLLECTOR
Configuration SINGLE WITH BUILT-IN DIODE
Operating Temperature (Max) 150°C
Qualification Status Not Qualified
Base Part Number IXG*20N60
Max Power Dissipation 150W
Subcategory Insulated Gate BIP Transistors
Additional Feature HIGH SPEED
Moisture Sensitivity Level (MSL) 1 (Unlimited)