IXGH20N120A3
RoHS 
RoHS compliant
RoHS compliantPackage TO-247-3
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Description
IGBT 1200V 40A 180W TO247
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Buying Options
Total Price: USD $7.14
Unit Price: USD $7.1421
≥1 USD $7.1421
≥10 USD $5.86055
≥100 USD $5.6772
≥500 USD $5.4948
≥1000 USD $5.31145
Inventory: 17171
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 26 Weeks
Physical
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2001
Series GenX3?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 180W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*20N120
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 180W
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 2.5V
Max Collector Current 40A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 2.3V
Turn On Time 66 ns
Test Condition 960V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Turn Off Time-Nom (toff) 1530 ns
IGBT Type PT
Gate Charge 50nC
Gate-Emitter Thr Voltage-Max 5V
Gate-Emitter Voltage-Max 20V
Switching Energy 2.85mJ (on), 6.47mJ (off)
Td (on/off) @ 25°C 16ns/290ns
Current - Collector Pulsed (Icm) 120A
Compliance
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Alternative Model
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