Operating Temperature -55°C~150°C TJ
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature HIGH SPEED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 150W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*17N100
Qualification Status Not Qualified
Element Configuration Single
Case Connection COLLECTOR
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 34A
Collector Emitter Breakdown Voltage 1kV
Voltage - Collector Emitter Breakdown (Max) 1000V
Test Condition 800V, 17A, 82 Ω, 15V
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 17A
Turn Off Time-Nom (toff) 1450 ns
Current - Collector Pulsed (Icm) 68A
Td (on/off) @ 25°C 100ns/500ns
Switching Energy 3mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V